Datasheet > 2SB1018_15

2SB1018_15

更新时间： 2022-02-26 12:51:34

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	214K
描述
Silicon PNP Power Transistors

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2SB1018_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1018

DESCRIPTION

·With TO-220F package

·High collector current

·Low collector saturation voltage

·Complement to type 2SD1411

APPLICATIONS

·Power amplifier applications

·High current switching applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-100

-80

UNIT

Open emitter

Open base

Open collector

-5

-7

I_B

Base current

-1

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

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