Power Transistors
2SB0934 (2SB934)
Silicon PNP epitaxial planar type
For Power switching
Unit: mm
8.5 0.2
6.0 0.2
3.4 0.3
1.0 0.1
Complementary to 2SD1257
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
0 to 0.4
R = 0.5
R = 0.5
1.0 0.1
0.8 0.1
2.54 0.3
1.4 0.1
0.4 0.1
5.08 0.5
(8.5)
(6.0)
1.3
1
2
3
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
−130
−80
Unit
V
(6.5)
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1: Base
2: Collector
3: Emitter
V
−7
V
N-G1 Package
Collector current
IC
ICP
PC
−7
A
Note) Self-supported type package is also prepared.
Peak collector current
Collector power dissipation
−15
A
40
W
Ta = 25°C
1.3
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
VCEO
ICBO
Conditions
Min
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
IC = −10 mA, IB = 0
−80
VCB = −100 V, IE = 0
VEB = −5 V, IC = 0
−10
−50
µA
µA
IEBO
hFE1
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −3 A
45
90
*
hFE2
260
−1.5
− 0.5
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
VBE(sat) IC = −5 A, IB = − 0.25 A
VCE(sat) IC = −5 A, IB = − 0.25 A
V
V
fT
ton
tstg
tf
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
0.5
1.5
0.1
MHz
µs
IC = −3 A,
Storage time
IB1 = − 0.3 A, IB2 = 0.3 A
VCC = −50 V
µs
Fall time
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
P
hFE2
90 to 180
130 to 260
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00016BED
1