Transistors
2SB0643, 2SB0644 (2SB643, 2SB644)
Silicon PNP epitaxial planar type
Unit: mm
For low-power general amplification
2.5±0.1
6.9±0.1
(1.0)
Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639)
(1.5)
(1.5)
R 0.9
■ Features
R 0.7
• M type package allowing easy automatic and manual insertion
as well as stand-alone fixing to the printed circuit board
■ Absolute Maximum Ratings Ta = 25°C
(0.85)
0.45±0.05
0.55±0.1
Parameter
Symbol
Rating
−30
Unit
2SB0643
2SB0644
2SB0643
2SB0644
VCBO
V
Collector to
base voltage
−60
3
2
1
1: Base
2: Collector
3: Emitter
VCEO
−25
V
Collector to
(2.5) (2.5)
emitter voltage
−50
M-A1 Package
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
−7
V
A
−1
− 0.5
600
A
Collector power dissipation
Junction temperature
Storage temperature
PC
mW
°C
°C
Tj
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
Unit
nA
µA
V
Collector cutoff current
V
CB = −20 V, IE = 0
CE = −20 V, IB = 0
−100
−1
ICEO
V
2SB0643
2SB0644
2SB0643
2SB0644
VCBO
I
C = −10 µA, IE = 0
−30
−60
−25
−50
−7
Collector to base
voltage
VCEO
I
C = −2 mA, IB = 0
V
V
Collector to emitter
voltage
Emitter to base voltage
VEBO
IE = −10 µA, IC = 0
1
2
*
Forward current transfer ratio *
hFE1
hFE2
VCE(sat)
fT
V
CE = −10 V, IC = −150 mA
CE = −10 V, IC = −500 mA
85
340
V
40
90
1
*
Collector to emitter saturation voltage
Transition frequency
IC = −300 mA, IB = −30 mA
− 0.35 − 0.6
V
MHz
pF
V
CB = −10 V, IE = 10 mA, f = 200 MHz
CB = −10 V, IE = 0, f = 1 MHz
200
Collector output capacitance
Cob
V
6
15
Note) 1: Pulse measurement
*
2: hFE Rank classification
*
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: August 2002
SJC00046BED
1