Datasheet > 2SB065020MTJY

2SB065020MTJY

更新时间： 2022-09-16 17:35:07

品牌	Logo	应用领域
士兰微 - SILAN		肖特基二极管
页数	文件大小	规格书
1页	18K
描述
SCHOTTKY BARRIER DIODE CHIPS

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2SB065020MTJY 数据手册

2SB065020MTJY

2SB065020MTJY SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB065020MTJY is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

Low forward voltage drop;

High ESD capability;

Chip Topography and Dimensions

High surge capability;

La: Chip Size: 650mm;

Lb: Pad Size: 580mm;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

ORDERING SPECIFICATIONS

Chip Size:6m5m0 X 650mm;

Product Name

Specification

Chip Thickness: 155±20um

For Au and AlSi wire bonding

package

Gross die:26000 Die/Wafer(5 inch)

2SB065020MTJY

ABSOLUTE MAXIMUM RATINGS

Parameters

Symbol

Ratings

Unit

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

RRM

0.5

5.5

125

FAV

FSM

°C

STG

•40~125

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameters

Reverse Voltage

Symbol

Test Conditions

Min.

••

Max.

••

Unit

I =250

I =100mA

0.30

0.385

Forward Voltage

Reverse Current

I =500mA

••

V =10V

••

V =20V

250

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.0

2007.10.24

Http: www.silan.com.cn

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