Transistor
2SB0709A (2SB709A)
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SD0601A (2SD601A)
2.8 +–00..32
0.65 0.15
1.5 –+00..0255
0.65 0.15
Features
High foward current transfer ratio hFE
ꢀ
ꢁ
.
ꢁ
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
3
Absolute Maximum Ratings (Ta=25˚C)
ꢀ
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
–45
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
0.1 to 0.3
0.4 0.2
–45
V
–7
V
–200
–100
200
mA
mA
mW
˚C
IC
1:Base
2:Emitter
JEDEC:TO–236
EIAJ:SC–59
Collector power dissipation
Junction temperature
Storage temperature
PC
3:Collector
Mini Type Package
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
ꢀ
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
µA
V
VCB = –20V, IE = 0
– 0.1
–100
Collector cutoff current
ICEO
VCE = –10V, IB = 0
IC = –10µA, IE = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
–45
–45
–7
IC = –2mA, IB = 0
V
IE = –10µA, IC = 0
V
*
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
160
460
Collector to emitter saturation voltage VCE(sat)
– 0.3
80
– 0.5
V
MHz
pF
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Collector output capacitance
Cob
2.7
*1
h
Rank classification
FE
Rank
hFE
Q
R
S
160 ~ 260
BQ
210 ~ 340
BR
290 ~ 460
BS
Marking Symbol
Note.) The Part number in the Parenthesis shows conventional part number.
1