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2SA928AO PDF预览

2SA928AO

更新时间: 2024-11-18 20:05:15
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
3页 59K
描述
Transistor

2SA928AO 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):2 A
配置:Single最小直流电流增益 (hFE):100
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):1 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

2SA928AO 数据手册

 浏览型号2SA928AO的Datasheet PDF文件第2页浏览型号2SA928AO的Datasheet PDF文件第3页 
UTC 2SA928A  
PNP EPITAXIAL SILICON TRANSISTOR  
AUDIO POWER AMPLIFIER  
FEATURES  
*Collector Dissipation Pc=1 W  
*3 W Output Application  
*Complement of 2SC2328A  
1
TO-92NL  
1: EMITTER 2: COLLECTOR 3: BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
RATING  
UNIT  
V
V
V
W
-30  
Collector-emitter voltage  
Emitter-base voltage  
Collector dissipation  
Collector current  
-30  
-5  
1
-2  
Ic  
A
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
150  
-55 ~ +150  
°C  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=-100µA,IE=0  
MIN TYP MAX UNIT  
-30  
-30  
-5  
V
V
Ic=-10mA,IB=0  
IE=-1mA,Ic=0  
VCB=-30V,IE=0  
V
nA  
nA  
-100  
-100  
320  
-1  
Emitter cut-off current  
DC current gain(note)  
Base-emitter on voltage  
Collector-emitter saturation voltage  
Output capacitace  
IEBO  
hFE  
VBE(on)  
VCE(sat)  
Cob  
VBE=-5V,Ic=0  
VCE=-2V,Ic=-500mA  
VCE=-2V,Ic=-500mA  
Ic=-1.5A,IB=-0.03A  
VCB =-10V, IE =0,f=1MHz  
VCE=-2V,Ic=-500mA  
100  
V
V
-2  
48  
120  
pF  
MHz  
Current gain bandwidth product  
fT  
CLASSIFICATION OF hFE  
RANK  
O
Y
RANGE  
100-200  
160-320  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R211-009,A  

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