2SA900

更新时间： 2024-02-23 14:17:34

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管局域网
页数	文件大小	规格书
3页	72K
描述
For low-frequency Power amplification Complementary

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技术参数
数据手册

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2SA900 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	250	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.2 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SA900 数据手册

Power Transistors

2SA0900 (2SA900)

Silicon PNP epitaxial planar type

Unit: mm

+0.5

–0.1

8.0

3.2 0.2

For low-frequency Power amplification

Complementary to 2SC1868

φ 3.16 ^0.1

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

0.5 0.1

1.76 0.1

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−20

−18

1: Emitter

2: Collector

3: Base

−5

Collector current

I_C

I_CP

P_C

T_j

−1

−2

TO-126B-A1 Package

Peak collector current

1.2

°C

Collector power dissipation

Junction temperature

Storage temperature

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−20

−18

−5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

I_C= −10 µA, I_E= 0

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −10 V, I_E= 0

V_CE= −18 V, I_B= 0

V_CE= −2 V, I_C= −500 mA

V_CE= −2 V, I_C= −1.5 A

−1

µA



I_CEO

−10

280

h_FE1

130

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −1 A, I_B= −50 mA

− 0.5

−1.2

V_BE(sat)I_C= −500 mA, I_B= −50 mA

f_T

V_CB= −6 V, I_E= 50 mA, f = 200 MHz

V_CB= −6 V, I_E= 0, f = 1 MHz

200

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

130 to 210

180 to 280

Note) The part numbers in the parenthesis show conventional part number.

Publication date: April 2003

SJD00004BED

12 3

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