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2SA1774-R PDF预览

2SA1774-R

更新时间: 2024-01-19 20:25:16
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 169K
描述
PNP Silicon Epitaxial Transistor

2SA1774-R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-75A
包装说明:ROHS COMPLIANT, EMT3, SC-75A, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:0.99
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SA1774-R 数据手册

 浏览型号2SA1774-R的Datasheet PDF文件第2页 
M C C  
2SA1774-Q  
2SA1774-R  
2SA1774-S  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
PNP Silicon  
RoHS Compliant. See ordering information)  
·
·
·
·
Small Package  
Mounting:any position  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Epitaxial Transistor  
SOT-523  
Maximum Ratings @ Ta = 25?(unless otherwise noted)  
Symbol  
IC  
Parameter  
Value  
-0.15  
Unit  
A
Collector Current  
PD  
Total Device Dissipation  
Junction Temperature  
0.15  
W
R
TJ  
150  
A
D
C
R
TSTG  
Storage Temperature Range  
-55 to +150  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
C
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc,IB=0)  
Collector-Base Breakdown Voltage  
(IC=-50uAdc,IE=0)  
Collector-Base Breakdown Voltage  
(IE=-50uAdc,IC=0)  
Collector-Base Cutoff Current  
(VCB=-60Vdc, IE=0)  
V(BR)CEO  
-50  
-60  
-7.0  
V
V
E
B
E
V(BR)CBO  
V
V(BR)EBO  
ICBO  
H
G
J
-0.1  
-0.1  
µAdc  
uAdc  
K
Emitter-Base Cutoff Current  
(VEB=-6.0Vdc, IC=0)  
IEBO  
DIMENSIONS  
ON CHARACTERISTICS  
INCHES  
MM  
DC Current Gain  
HFE  
VCE(sat)  
FT  
120  
560  
-0.5  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
.059  
.030  
.057  
MAX  
.067  
.033  
.069  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
(IC=-1.0mAdc, VCE=-6.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-5.0mAdc, IB=-5.0mAdc)  
Transition Frequency  
(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)  
Collector Output Capacitance  
(VCB=-12Vdc,IC=0Adc,f=1MHZ)  
Vdc  
MHZ  
PF  
.020 Nominal  
0.50Nominal  
0.90  
140(Typ)  
.035  
.043  
.004  
.031  
.008  
.014  
1.10  
.000  
.028  
.004  
.010  
.000  
.70  
.100  
.25  
.100  
0.80  
.200  
.35  
Cob  
5
CLASSIFICATION OF hFE  
Rank  
Q
R
180-390  
FR  
S
Range  
120-270  
FQ  
270-560  
FS  
Marking  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 2  

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