Datasheet > 2SA1762S

2SA1762S

更新时间： 2024-11-24 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	61K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 500MA I(C) \| SC-71

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中文翻译

获取价格

数据手册

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2SA1762S 数据手册

Transistor

2SA1762

Silicon PNP epitaxial planer type

For low-frequency driver amplification

Complementary to 2SC4606

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

High collector to emitter voltage V_CEO

R0.9

■

●

Optimum for the driver stage of a low-frequency and 25 to 30W

output amplifier.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

■

0.55±0.1

0.45±0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–80

–5

2.5

–1

– 0.5

1:Base

I_C

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= –20V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

– 0.1

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–80

–5

I_C= –100µA, I_B= 0

I_E= –10µA, I_C= 0

h_FE1

V_CE= –10V, I_C= –150mA

V_CE= –5V, I_C= –500mA

I_C= –300mA, I_B= –30mA

130

330

Forward current transfer ratio

h_FE2

100

– 0.2

– 0.85

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.4

–1.2

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

^*h_FE1Rank classification

Rank

h_FE1

130 ~ 220

185 ~ 330

12 3 4

中文翻译

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