2SA1743-L

更新时间： 2024-02-15 09:35:03

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管功率双极晶体管局域网
页数	文件大小	规格书
6页	132K
描述
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA1743-L 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.29.00.75
风险等级：	5.24	外壳连接：	ISOLATED
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	100
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	80 MHz
Base Number Matches：	1

2SA1743-L 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1743

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SA1743 is a power transistor developed for high-speed

switching and features a high h^FEat low V^CE(sat). This transistor is

ideal for use as a driver in DC/DC converters and actuators.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High h^FEand low V^CE(sat):

h^FE≥ 100 (V^CE= −2 V, I^C= −2 A)

V ^CE(sat)≤ 0.3 V (I^C= −6 A, I^B= −0.3 A)

• Full-mold package that does not require an insulating board or

bushing

QUALITY GRADES

Electrode Connection

1. Base

• Standard

2. Collector

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to know

the specification of quality grade on the devices and its

recommended applications.

3. Emitter

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

Ratings

−100

−60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CEO

−7.0

V^EBO

−10

I^C(DC)

−20

I^C(pulse)*

I^B(DC)

−5.0

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16126EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

中文翻译

下载PDF

与2SA1743-L相关器件

型号	品牌	描述	获取价格	数据表
2SA1743M	NEC	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 10A I(C) \| TO-220VAR	获取价格
2SA1743-M	NEC	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,	获取价格
2SA1743-M-AZ	RENESAS	10A, 60V, PNP, Si, POWER TRANSISTOR	获取价格
2SA1744	NEC	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING	获取价格
2SA1744	RENESAS	SILICON POWER TRANSISTOR	获取价格
2SA1744	NJSEMI	Trans GP BJT PNP 60V 15A Automotive 3-Pin(3+Tab) TO-220 Isolated	获取价格