Datasheet > 2SA1740L-X-AB3-R

2SA1740L-X-AB3-R

更新时间： 2022-09-16 17:07:33

品牌	Logo	应用领域
友顺 - UTC		驱动器高压
页数	文件大小	规格书
5页	188K
描述
HIGH VOLTAGE DRIVER APPLICATION

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中文翻译

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数据手册

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2SA1740L-X-AB3-R 数据手册

2SA1740

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS ( T_A=25℃, unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-400

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-400

-5

-200

Collector Current (PULSE)

Collector Power Dissipation

Junction Temperature

Storage Temperature

I_CP

-400

P_C

0.5

T_J

+150

-55 ~ +150

℃

T_STG

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C= -10μA,I_E=0

I_C= -1mA,I_B=0, R_BE=∞

I_E= -10μA,I_C=0

MIN

-400

-5

TYP MAX UNIT

Collect-Base Breakdown Voltage

Collect-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

V_CB= -300V,I_E=0

-0.1

200

μA

I_EBO

V_EB= -4V,I_C=0

DC Current Gain

h_FE

V_CE= -10V, Ic= -50mA

I_C= -50mA,I_B= -5mA

V_CB=-30V, f=1MHz

V_CB=-30V,f=1MHz

V_CE= -30V,I_C= -10mA

See test circuit

Collect-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

V_CE(SAT)

V_BE(SAT)

C_OB

-0.8

-1.0

MHz

μs

Reverse Transfer Capacitance

Gain-Bandwidth Product

Turn-On Time

C_RE

f_T

t_ON

0.25

5.0

Turn-Off Time

t_OFF

See test circuit

μs

CLASSIFICATION OF h_FE

RANK

RANGE

60-120

100-200

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R208-026,C

www.unisonic.com.tw

123 4 5

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