2SA1741

更新时间： 2024-01-31 18:45:07

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
页数	文件大小	规格书
6页	169K
描述
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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技术参数
数据手册

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2SA1741 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.2
外壳连接：	ISOLATED	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	80 MHz	Base Number Matches：	1

2SA1741 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1741

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SA1741 is a power transistor developed for high-speed

switching and features a high h^FEat low V^CE(sat). This transistor is

ideal for use as a driver in DC/DC converters and actuators.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High h^FEand low V^CE(sat):

h^FE≥ 100 (V^CE= −2 V, I^C= −1 A)

V^CE(sat)≤ 0.3 V (I^C= −3 A, I^B= −0.15 A)

• Full-mold package that does not require an insulating board or

bushing when mounting.

Electrode Connection

1. Base

2. Collector

3. Emitter

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

Ratings

−100

−60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CEO

−7.0

V^EBO

−5.0

I^C(DC)

−10

I^C(pulse)*

I^B(DC)

−2.5

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

2.0

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16125EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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