Datasheet > 2SA1740

2SA1740

更新时间： 2025-09-22 18:53:47

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
4页	602K
描述
Pcm(mW) : 500; Ic(mA) : 200; BVCBO(V) : 400; BVCEO(V) : 400; BVEBO(V) : 5; Min : 60; Max : 200; VCE (sat) (v) : 10; Package Outline : SOT-89;

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2SA1740 数据手册

DONGGUAN NANJING ELECTRONICS LTD.,

PNP Epitaxial Planar Silicon Transistor

2SA1740

FEATURES

High breakdown voltage.

Adoption of MBIT process.

Excellent h_FElinearlity.

APPLICATIONS

High-Voltage Driver Applications

SOT-89

ORDERING INFORMATION

Type No.

2SA1740

Marking

Package Code

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-400

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-200

-400

Collector Current(Pulse)

I_CP

0.5

Collector Dissipation

P_C

1.3 Note1

Junction and Storage Temperature

T_j,T_stg

-55 to +150

℃

Note1:Mounted on ceramic substrate(250mm²*0.8t)

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2SA1740E	UTC	获取价格	Transistor
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