2SA1618-GR

更新时间： 2024-02-08 20:12:54

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
4页	214K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

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数据手册

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2SA1618-GR 数据手册

2SA1618

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

= −50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

−0.1

μA

CBO

= −5 V, I = 0

EBO

DC current gain

= −6 V, I = −2 mA

120

⎯

400

(Note 2)

CE (sat)

Collector-emitter saturation voltage

Transition frequency

= −100 mA, I = −10 mA

⎯

−0.1

⎯

−0.3

⎯

= −10 V, I = −1 mA

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

Note 2:

h classification Y (Y): 120~240, GR (G): 200~400

(

) marking symbol

2007-11-01

123 4

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