Datasheet > 2SA1193(K)

2SA1193(K)

更新时间： 2024-01-04 14:14:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
6页	34K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 500MA I(C) \| TO-92

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技术参数
数据手册

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2SA1193(K) 技术参数

生命周期：	Not Recommended	零件包装代码：	TO-92
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.58	Is Samacsys：	N
Base Number Matches：	1

2SA1193(K) 数据手册

2SA1193(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–60

–7

–0.5

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

i_C(peak)

P_C

–1.0

0.9

°C

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown V_(BR)CEO

voltage

–60

—

I_C= –1 mA, R_BE= ∞

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

I_CBO

I_EBO

h_FE

—

–1.0

—

µA

V_CB= –60 V, I_E= 0

—

V_EB= –7 V, I_C= 0

2000

—

V_CE= –3 V, I_C= –250 mA*¹

I_C= –250 mA, I_B= –0.5 mA*¹

Collector to emitter saturation V_CE(sat)

voltage

–1.5

Base to emitter saturation

voltage

V_BE(sat)

—

–2.0

Turn on time

t_on

t_off

—

0.3

0.9

—

µs

I_C= –250 mA

Turn off time

I_B1= –I_B2= –0.5 mA

Note: 1. Pulse test

123 4 5 6

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