Datasheet > 2SA1160

2SA1160

更新时间： 2024-01-06 01:33:20

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	131K
描述
TRANSISTOR (PNP)

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技术参数
数据手册

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2SA1160 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.84

2SA1160 数据手册

RoHS

2SA1160

TO-92MOD

2SA1160 TRANSISTOR (PNP)

1. EMITTER

FEATURE

Power dissipation

2. COLLECTOR

3. BASE

P_CM: 0.9 W (Tamb=25℃)

Collector current

_CM:-2A

Collector-base voltage

_(BR)CBO: -20 V

123

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= -1mA , I_E=0

MIN

-20

-10

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-10mA , I_B=0

I_E= -1mA, I_C=0

V_CB= -20 V, I_E=0

V_EB= -6 V, I_C=0

-0.1

600

µA

I_EBO

Emitter cut-off current

h_FE(1)

V_CE=-1V, I_C= -0.5A

V_CE=-1V, I_C= -4A

I_C= -2A, I_B=-50mA

140

DC current gain

h_FE(2)

V_CE(sat)

-0.2

140

-0.5

Collector-emitter saturation voltage

Transition frequency

V_CE=-1V, I_C= -0.5A

MHz

f_T

V_CE=-10V, I_E=0,f=1 MHz

Output capacitance

C_ob

WEJ ELECTRONIC CO.,LTD

CLASSIFICATION OF h_FE

Rank

200-400

140-280

300-600

Range

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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