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2SA1145-OTPE6 PDF预览

2SA1145-OTPE6

更新时间: 2024-01-25 23:19:47
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
5页 133K
描述
TRANSISTOR 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SA1145-OTPE6 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:End Of Life包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.78
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):80
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA1145-OTPE6 数据手册

 浏览型号2SA1145-OTPE6的Datasheet PDF文件第2页浏览型号2SA1145-OTPE6的Datasheet PDF文件第3页浏览型号2SA1145-OTPE6的Datasheet PDF文件第4页浏览型号2SA1145-OTPE6的Datasheet PDF文件第5页 
2SA1145  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1145  
Audio Frequency Amplifier Applications  
Unit: mm  
Complementary to 2SC2705.  
Small Collector Output Capacitance: C = 2.5 pF (typ.)  
ob  
High Transition Frequency: f = 200 MHz (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
150  
150  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
5  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
800  
C
T
j
150  
JEDEC  
JEITA  
TO-92MOD  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-5J1A  
Weight: 0.36 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-09  

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