Datasheet > 2SA1013G-X-T9N-K

2SA1013G-X-T9N-K

更新时间： 2022-02-26 09:52:41

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	140K
描述
PNP EPITAXIAL SILICON TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1013G-X-T9N-K 数据手册

2SA1013

PNP EPITAXIAL SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATINGS (T_A=25C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-160

-6

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-1

Base Current

I_B

-0.5

SOT-89

500

°C

Collector Power Dissipation

P_C

TO-92/TO-92NL

900

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_A=25C, unless otherwise specified)

PARAMETER

SYMBOL

I_CBO

TEST CONDITIONS

V_CB=-150V, I_E=0

MIN TYP MAX UNIT

-1.0 µA

Collector Cut-Off Current

Emitter Cut-Off Current

I_EBO

-1.0 µA

V_EB=-6V, I_C=0

V_(BR)CEO

h_FE

V_CE(sat)

V_BE

-160

Collector-Emitter Breakdown Voltage

DC Current Gain

I_C=-10mA, I_B=0

V_CE=-5V, I_C=-200mA

I_C=-500mA, I_B=-50mA

V_CE=-5V, I_C=-5mA

V_CE=-5V, I_C=-200mA

V_CB=-10V, f=1MHz, I_E=0

320

-1.5

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

-0.45

-0.75

f_T

MHz

Transition Frequency

C_ob

Collector Output Capacitance



CLASSIFICATION OF h_FE

RANK

RANGE

60~120

100~200

160~320

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R208-049.D

www.unisonic.com.tw

123

下载PDF

与2SA1013G-X-T9N-K相关器件

型号	品牌	描述	获取价格	数据表
2SA1013L-O-T92-B	UTC	PNP EPITAXIAL SILICON TRANSISTOR	获取价格
2SA1013L-O-T92-K	UTC	PNP EPITAXIAL SILICON TRANSISTOR	获取价格
2SA1013L-O-T9N-K	UTC	PNP EPITAXIAL SILICON TRANSISTOR	获取价格
2SA1013L-P-AB3-R	UTC	PNP EPITAXIAL SILICON TRANSISTOR	获取价格
2SA1013L-P-T92-K	UTC	PNP EPITAXIAL SILICON TRANSISTOR	获取价格
2SA1013L-P-T9N-B	UTC	PNP EPITAXIAL SILICON TRANSISTOR	获取价格