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2SA1013-O PDF预览

2SA1013-O

更新时间: 2024-11-12 07:29:27
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 102K
描述
PNP Epitaxial Silicon Transistor

2SA1013-O 技术参数

是否Rohs认证: 不符合生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
最大集电极电流 (IC):1 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

2SA1013-O 数据手册

 浏览型号2SA1013-O的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
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2SA1013-R  
2SA1013-O  
2SA1013-Y  
TM  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
Compliant. See ordering information)  
x
Capable of 0.9Watts of Power Dissipation.  
PNP  
Epitaxial Silicon  
Transistor  
Collector-current -1.0A  
Collector-base Voltage -160V  
Operating and storage junction temperature range: -55R to +150R  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL rating 1  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
TO-92MOD  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IC=-1.0mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=-100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-10mAdc, IC=0)  
Collector Cutoff Current  
(VCB=-150Vdc, IE=0)  
-160  
-160  
-6.0  
---  
---  
---  
Vdc  
Vdc  
E
---  
Vdc  
-1.0  
-10  
-1.0  
uAdc  
uAdc  
uAdc  
A
B
C
D
ICEO  
Collector Cutoff Current  
(VCB=-120Vdc, IE=0)  
Emitter Cutoff Current  
---  
IEBO  
---  
(VEB=-6.0Vdc, IC=0)  
ON CHARACTERISTICS  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
DC Current Gain  
(IC=-200mAdc, VCE=-5.0Vdc)  
DC Current Gain  
(IC=-50mAdc, VCE=-5.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-50mAdc)  
Base-Emitter Saturation Voltage  
(IC=-5.0mAdc, VCE=-5.0Vdc)  
65  
40  
---  
---  
310  
---  
---  
F
G
1. EMITTER  
2. COLLECTOR  
3. BASE  
---  
123  
H
-1.5  
-0.75  
Vdc  
Vdc  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(IC=-200mAdc, VCE=-5.0Vdc,  
f=30MHz)  
-15  
---  
MHz  
DIMENSIONS  
MM  
INCHES  
DIM  
A
B
C
D
E
F
G
H
I
MIN  
---  
---  
---  
---  
MAX  
.030  
.039  
.031  
.024  
.201  
MIN  
---  
---  
---  
---  
MAX  
.750  
1.00  
.80  
0.60  
5.10  
NOTE  
CLASSIFICATION OF HFE (1)  
Rank  
Range  
R
O
Y
60-120  
120-200  
200-300  
---  
---  
.050  
.050  
.100  
.039  
1.27  
1.27  
2.54  
1.00  
J
K
L
M
N
---  
---  
---  
---  
---  
.087  
.024  
.323  
.413  
.161  
---  
---  
---  
---  
---  
2.20  
.60  
8.20  
10.50  
4.10  
www.mccsemi.com  
1 of 2  
Revision: 4  
2008/02/01  

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