生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.17 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 350 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1009M | NEC | TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-220AB |
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2SA1009-M | NEC | Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |
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2SA1009-M | RENESAS | Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |
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2SA1009-M-AZ | RENESAS | Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |
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2SA101 | ETC | Ge PNP Drift |
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2SA1010 | RENESAS | SILICON POWER TRANSISTOR |
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