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2SA1010-L-AZ PDF预览

2SA1010-L-AZ

更新时间: 2024-11-29 13:04:07
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2SA1010-L-AZ 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SA1010  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SA1010 is a mold power transistor developed for high-  
voltage high-speed switching, and is ideal for use as a driver in  
devices such as switching regulators, DC/DC converters, and high-  
frequency power amplifiers.  
FEATURES  
• Low collector saturation voltage  
• Fast switching speed  
• Complementary transistor: 2SC2334  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
Ratings  
100  
100  
7.0  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
VCBO  
VCEO  
V
Pin Connection  
VEBO  
IC(DC)  
V
7.0  
A
15  
IC(pulse)*  
A
3.5  
IB(DC)  
A
PT (Tc = 25 °C)  
PT (Ta = 25 °C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
40  
W
W
°C  
°C  
1.5  
150  
55 to +150  
Tstg  
* PW 300 µs, duty cycle 10%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16118EJ2V0DS00  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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