Datasheet > 2SA1010-K-AZ

2SA1010-K-AZ

更新时间： 2024-02-06 07:10:47

品牌	Logo	应用领域
瑞萨 - RENESAS		局域网开关晶体管
页数	文件大小	规格书
6页	118K
描述
7A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB, SC-46, 3 PIN

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技术参数
数据手册

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2SA1010-K-AZ 技术参数

生命周期：	Transferred	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.42
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	7 A
集电极-发射极最大电压：	100 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

2SA1010-K-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1010

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SA1010 is a mold power transistor developed for high-

voltage high-speed switching, and is ideal for use as a driver in

devices such as switching regulators, DC/DC converters, and high-

frequency power amplifiers.

FEATURES

• Low collector saturation voltage

• Fast switching speed

• Complementary transistor: 2SC2334

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Ratings

−100

−7.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CBO

V^CEO

Pin Connection

V^EBO

I^C(DC)

−7.0

−15

I^C(pulse)*

−3.5

I^B(DC)

P^T(Tc = 25 °C)

P^T(Ta = 25 °C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

1.5

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16118EJ2V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

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与2SA1010-K-AZ相关器件

型号	品牌	描述	获取价格	数据表
2SA1010L	NEC	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 7A I(C) \| TO-220AB	获取价格
2SA1010-L	RENESAS	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast	获取价格
2SA1010-L-AZ	NEC	暂无描述	获取价格
2SA1010M	NEC	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 7A I(C) \| TO-220AB	获取价格
2SA1010-M	RENESAS	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast	获取价格
2SA1011	JMNIC	Silicon PNP Power Transistors	获取价格