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2PG009

更新时间： 2024-11-21 20:08:47
品牌 Logo 应用领域
松下 - PANASONIC 局域网栅功率控制晶体管
页数 文件大小 规格书
4页 399K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 510V V(BR)CES, N-Channel, TO-220AB, TO-220D-A1, 3 PIN

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2PG009 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
HTS代码：8541.29.00.95风险等级：5.84
最大集电极电流 (IC)：40 A集电极-发射极最大电压：510 V
配置：SINGLEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：385 ns
标称接通时间 (ton)：685 nsBase Number Matches：1

2PG009 数据手册

 浏览型号2PG009的Datasheet PDF文件第2页浏览型号2PG009的Datasheet PDF文件第3页浏览型号2PG009的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
IGBT  
2PG009  
Silicon N-channel enhancement IGBT  
For plasma display panel drive  
For high speed switching circuits  
Features  
Package  
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  
High-speed switching:tf = 185 ns (typ.)  
ꢀCode  
TO-220D-A1  
ꢀMarking Symbol: 2PG009  
ꢀPin Nam
1. Ga
Absolute Maximum Ratings TC = 25°C  
Parameter  
Collector-emitter voltage (E-B short)  
Gate-emitter voltage (E-B short)  
Collector current  
Symbol  
VCES  
VGES  
IC  
Rating  
510  
Unt  
2. Colle
mitter  
–30 to +35  
40  
V
A
Internal Connection  
Peak collector current *  
IC
A
C
E
40  
W
W
°C  
°C  
Power dissipation  
PC  
T
G
T = 25°C  
a
2.0  
Junction temperature  
Storage temperature  
15
T
stg  
–55 to +150  
Note) : Assurance of repetitve pue. (Repive period ≤ 5 ms on-dut≤ 20%)  
*
But, it must stay whin 40% oall that the time impreed pulse repetitively.  
T
5.0 On-duty 20%  
≤  
≤
Elctical Cteristics TC 25°C±°C  
Parameter  
Collector-eitter voltage (E-short)  
Colltor-emitter (E-B sort)  
Gate-emitter chort)  
Gate-emitter thrage  
Symbol  
Conditions  
IC = 1 mA, VGE = 0  
Min  
Typ  
Max  
Unit  
V
VCES  
ICES  
IGES  
510  
*
VCE = 408 V, VGE = 0  
5.0  
±1.0  
5.5  
mA  
mA  
V
VGE = ±35 V, –30 V, VCE = 0  
VGE(th) VCE = 10 V, IC = 1.0 mA  
VCE(sat) VGE = 15 V, IC = 40A  
–VCE IC = –100 mA, VGE = 15 V  
Cies  
3.0  
18  
Collector-emitter satuation voltage  
Collector-emitter reverse break down voltage  
Short-circuit input capacitance (Common emitter)  
Short-circuit output capacitance (Common emitter)  
Reverse transfer capacitance (Common emitter)  
Gate charge load  
1.95  
22.5  
1210  
125  
21  
2.5  
V
V
pF  
Coes  
Cres  
Qg  
VCE = 25 V, VGE = 0, f = 1 MHz  
pF  
pF  
51  
nC  
nC  
nC  
ns  
Gate-emitter charge  
Qge  
VCC = 250 V, IC = 40A, VGE = 15 V  
9
Gate-collector charge  
Qgc  
20  
Turn-on delay time  
td(on)  
tr  
td(off)  
tf  
Rth(ch-c)  
Rth(j-a)  
75  
Rise time  
610  
200  
185  
ns  
VCC = 250 V, IC = 40A,  
RL ≈ 6.25 Ω, VGE = 15 V  
Turn-off delay time  
ns  
Fall time  
300  
3.13  
63  
ns  
Thermal resistance (ch-c)  
Thermal resistance (ch-a)  
°C/W  
°C/W  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: February 2009  
SJN00007AED  
1
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