2N7002VA

更新时间： 2024-02-21 22:43:36

品牌	Logo	应用领域
美台 - DIODES		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
6页	252K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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2N7002VA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002VA 数据手册

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

3.0

1.6

V_GS= 3V

4.5V

V_GS= 10V

1.4

2.5

2.0

1.5

1.0

1.2

1.0

0.8

0.6

10V

0.4

0.2

0.0

0.2

0.4

0.6

0.8

1.0

150

I_D. DRAIN-SOURCE CURRENT(A)

V_DS. DRAIN-SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature

Figure 4. On-Resistance Variation with

Gate-Source Voltage

3.0

V_GS= 10V

I_D= 500 mA

2.5

2.0

1.5

1.0

0.5

2.5

I_D= 500 mA

2.0

I_D= 50 mA

1.5

1.0

-50

100

T_J. JUNCTION TEMPERATURE(^oC)

V_GS. GATE-SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

2.5

1.0

T_J= -25^oC

V_DS= 10V

V_GS= V_DS

150^oC

0.8

25^oC

2.0

1.5

1.0

125^oC

0.6

I_D= 1 mA

75^oC

I_D= 0.25 mA

0.4

0.2

0.0

-50

100

150

T_J. JUNCTION TEMPERATURE(^oC)

V_GS. GATE-SOURCE VOLTAGE (V)

2N7002V/VA Rev. A

www.fairchildsemi.com

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