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2N7002T-7-F PDF预览

2N7002T-7-F

更新时间: 2024-01-20 20:55:59
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 341K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002T-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.93其他特性:HIGH RELIABILITY
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.115 A最大漏极电流 (ID):0.115 A
最大漏源导通电阻:13.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002T-7-F 数据手册

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DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF  
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As used herein:  
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when properly used in accordance with instructions for use  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
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Definition  
This datasheet contains the design specifications for product development.  
Specifications may change in any manner without notice.  
Advance Information  
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This datasheet contains preliminary data; supplementary data will be pub-  
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changes at any time without notice to improve design.  
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Obsolete  
This datasheet contains specifications on a product that has been discontin-  
ued by Fairchild semiconductor. The datasheet is printed for reference infor-  
mation only.  
Rev. I30  
© 2007 Fairchild Semiconductor Corporation  
2N7002T Rev. A  
www.fairchildsemi.com  
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