Datasheet > 2N7002S

2N7002S

更新时间： 2024-02-16 06:03:22

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
5页	122K
描述
SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere

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技术参数
数据手册

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2N7002S 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002S 数据手册

RATING CHARACTERISTIC CURVES ( 2N7002S )

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage V_GS= 0 V, I_D= 10 µA

Zero Gate Voltage Drain Current V_DS= 60 V, V_GS= 0 V

µA

T_C=125°C

0.5

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 15 V, V_DS= 0 V

V_GS= -15 V, V_DS= 0 V

-10

ON CHARACTERISTICS (Note 1)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 250 µA

2.0

1.7

2.5

3.0

R_DS(ON)

Static Drain-Source On-Resistance V_GS= 10 V, I_D= 250 mA

V_GS= 4.0 V, I_D= 100 mA

Ω

2.5

4.0

V_DS(ON)

Drain-Source On-Voltage

V_GS= 10 V, I_D= 500mA

V_GS= 5.0 V, I_D= 50 mA

V_GS= 10 V, V_DS= 7.5V_DS(on)

0.6

3.75

1.5

0.09

1300

700

250

I_D(ON)

On-State Drain Current

800

500

V_GS= 4.5V, V_DS

= 10V_DS(on)

g_FS

Forward Transconductance

V_DS= 15 V_DS(on), I_D= 200 mA

DYNAMIC CHARACTERISTICS

Q_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

0.6

1.0

V_DS= 30 V, V_GS= 10 V,

I_D= 250 mA

Q_gs

Q_gd

0.06

C_iss

C_oss

C_rss

t_on

Input Capacitance

V_DS= 25 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

1.2

V_DD= 30 V, R_L= 200

I_D= 100 mA, V_GS= 10 V,

R_GEN= 10

Ω,

7.5

t_r

Ω

t_off

t_f

Turn-Off Time

V_DD= 30 V, R_L= 200

I_D= 100 mA, V_GS= 10 V,

R_GEN= 10

Ω,

7.5

Ω

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

115

0.8

I_SM

V_SD

Drain-Source Diode Forward

Voltage

V_GS= 0 V, I_S= 200 mA (Note 1)

0.85

1.2

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

123 4 5

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