Datasheet > 2N7002K(ESD)

2N7002K(ESD)

更新时间： 2025-07-27 18:28:03

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
4页	462K
描述
Package : SOT-23; Vdss Min(V) Drain-Source voltage : 60; Drain Current ID(A)25℃ : 0.3; Vgs(V) : 20; Vth Typ : 1.3; Ron(10V) (mΩ)Typ : 2000; Ron(10V) (mΩ) Max : 3000; Ron(4.5V) (mΩ)Typ : 3000; Ron(4.5V) (mΩ)Max : 4000;

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数据手册

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2N7002K(ESD) 数据手册

2N7002K

N-Channel Enhancement Mode Power MOSFET

I_D

V_(BR)DSS

R_DS(on)MAX

SOT-23

10V

300

4.5V

1. GATE

2. SOURCE

3. DRAIN

APPLICATION

FEATURE

Load Switch for Portable Devices

High density cell design for Low R_DS

（

）

DC/DC Converter

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

ESD protected

MARKING

Equivalent circuit

K72

MOSFET MAXIMUM RATINGS (T^a= 25°C unless otherwise noted)

Symbol Parameter

Unit

Value

±20

300

Drain-Source voltage

Gate-Source voltage

Drain Current

Power Dissipation

0.35

150

℃

Junction Temperature

Storage Temperature

stg

-55~+150

357

℃

RθJA

Thermal Resistance fromJunction to Ambient

℃ /W

1/4

Rev :01.06.2018

www.leiditech.com

12 3 4

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