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2N6727 PDF预览

2N6727

更新时间: 2024-11-24 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 132K
描述
TRANSISTOR (PNP)

2N6727 数据手册

  
RoHS  
2N6727  
2N6727  
TRANSISTOR (PNP)  
TO-92  
FEATURES  
1. EMITTER  
2. BASE  
Power dissipation  
PCM : 1  
W(Tamb=25)  
3. COLLECTOR  
Collector current  
ICM  
Collector-base voltage  
(BR)CBO : -50  
:
-1.5 A  
1 2 3  
V
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= -1 mA, IE=0  
MIN  
-50  
-40  
-5  
TYP  
MAX  
UNIT  
V
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -10 mA , IB=0  
IE= -1 mA, IC=0  
VCB= -50 V, IE=0  
V
V
-0.1  
-1  
µA  
µA  
µA  
ICEO  
VCB= -40 V, IB=0  
Collector cut-off current  
IEBO  
VEB= -5 V, IC=0  
-0.1  
250  
Emitter cut-off current  
HFE(1)  
VCE=-1 V, IC= -1 A  
VCE=-1 V, IC= -10 mA  
VCE=-1 V, IC= -100 mA  
IC= -1 A, IB= -100 mA  
VCE= -1 V, IC= -1 A  
50  
55  
60  
DC current gain  
HFE(2)  
HFE(3)  
VCE(sat)  
VBE(on)  
-0.5  
-1.2  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
WEJ ELECTRONIC CO.,LTD  
VCE=-10 V , IC= -50 mA  
50  
MHz  
Transition frequency  
f T  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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