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by 2N6344/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full–wave silicon
gate controlled solid–state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
8 to 12 AMPERES RMS
600 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
MT1
•
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Two Modes (2N6344, 2N6344A) or Four Modes
(2N6348A, 2N6349)
MT2
G
For 400 Hz Operation, Consult Factory
CASE 221A-07
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off–State Voltage
V
Volts
Amps
Amps
DRM
(Gate Open, T = –40 to +110°C)
J
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N6344, 2N6344A, 2N6348
2N6349
600
800
*RMS On–State Current
Full Cycle Sine Wave 50 to 60 Hz
(T = +80°C) 2N6344, 2N6349
I
8
4
12
6
C
T(RMS)
(T = +90°C)
C
(T = +80°C) 2N6344A, 2N6348A
C
(T = +90°C)
C
*Peak Non-repetitive Surge Current
I
100
40
TSM
(One Full Cycle, 60 Hz, T = +80°C)
C
Preceded and followed by Rated Current
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
*Peak Gate Power (T = +80°C, Pulse Width = 2 µs)
P
20
Watts
Watt
Amps
Volts
°C
C
GM
*Average Gate Power (T = +80°C, t = 8.3 ms)
P
0.5
2
C
G(AV)
*Peak Gate Current
I
GM
*Peak Gate Voltage
V
GM
10
*Operating Junction Temperature Range
*Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
1
Motorola Thyristor Device Data
Motorola, Inc. 1998