Datasheet > 2N6345

2N6345

更新时间： 2024-11-18 20:24:11

品牌	Logo	应用领域
DIGITRON		栅三端双向交流开关栅极
页数	文件大小	规格书
5页	1460K
描述
Triac; Max Peak Repetitive Reverse Voltage: 8; Max TMS Bridge Input Voltage: 100; Max DC Reverse Voltage: 2

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技术参数
数据手册

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2N6345 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.7	Is Samacsys：	N
触发设备类型：	TRIAC	Base Number Matches：	1

2N6345 数据手册

2N6342-2N6349

SILICON BIDIRECTIONAL THYRISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage⁽¹⁾

(Gate open, T_J= -40 to 110°C, ½ sine wave 50 to 60Hz)

2N6342, 2N6346

200

400

600

800

V_DRM

Volts

2N6343, 2N6347

2N6344, 2N6348

2N6345, 2N6349

RMS on-state current

Full cycle sine wave 50 to 60Hz

T_C= 80°C

T_C= 90°C

I_T(RMS)

Amps

Peak non-repetitive surge current

(One full cycle, 60Hz, T_C= 80°C)

I_TSM

100

Preceded and followed by rated current

Circuit fusing (t = 8.3ms)

I²t

A²s

Peak gate power

P_GM

Watts

(T_C= 80°C, pulse width = 2µs)

Average gate power

P_G(AV)

Watts

(T_C= 80°C, t = 8.3ms)

0.5

Peak gate current

I_GM

V_GM

T_J

Amps

Volts

°C

Peak gate voltage

Operating temperature range

-40 to 125

-40 to 150

Storage temperature range

T_stg

°C

Note 1: V_DRMfor all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal resistance, junction to case

R_ӨJC

2.2

°C/W

ELECTRICAL CHARACTERISTICS (T_C= 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak blocking current

(V_D= rated V_DRM, gate open)

T_J= 25°C

I_DRM

µA

T_J= 100°C

Peak on-state voltage

V_TM

Volts

≤ 2%)

(I_TM= 11A peak, pulse width = 1 to 2ms, duty cycle

1.3

1.55

Rev. 20131205

12 3 4 5

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与2N6345相关器件

型号	品牌	获取价格	描述	数据表
2N6345A	NJSEMI	获取价格	SILICON BIDIRECTIONAL THYRISTORS
2N6345A	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
2N6345A-16	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220, 2 PIN
2N6345A-AC	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
2N6345A-AF	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
2N6345A-AK	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
2N6345A-AN	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
2N6345A-AS	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
2N6345A-AU	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
2N6345A-BA	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB