Datasheet > 2N6300

2N6300

更新时间： 2024-02-29 19:34:33

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
2页	58K
描述
PNP DARLINGTON POWER SILICON TRANSISTOR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N6300 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.73	Base Number Matches：	1

2N6300 数据手册

TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 539

Devices

Qualified Level

JANTX

JANTXV

2N6300

2N6301

MAXIMUM RATINGS

Ratings

Symbol 2N6300 2N6301 Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Vdc

V_CEO

V_CBO

V_EBO

I_B

Vdc

5.0

120

8.0

Vdc

mAdc

Adc

Collector Current

I_C

Total Power Dissipation

@ T_C= 0⁰C ⁽¹⁾

@ T_C= 100⁰C

⁰C

P_T

Operating & Storage Junction Temperature Range

1) Derate linearly 0.428 W/⁰C above T_C> 0⁰C

-55 to +200

T_J_,T

stg

TO-66* (TO-213AA)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Symbol

Min.

Max.

Unit

Vdc

2N6300

2N6301

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 30 Vdc

V_CE= 40 Vdc

Collector-Emitter Cutoff Current

V_CE= 60 Vdc, V_BE= -1.5 Vdc

V_CE= 80 Vdc, V_BE= -1.5 Vdc

Emitter-Base Cutoff Current

V_EB= 5.0 Vdc

0.5

mAdc

2N6300

2N6301

I_CEO

I_CEX

I_EBO

0.5

2N6300

2N6301

2.0

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

下载PDF

与2N6300相关器件

型号	品牌	描述	获取价格	数据表
2N6300_1	MICROSEMI	NPN DARLINGTON POWER	获取价格
2N6301	MOTOROLA	8A, 80V, NPN, Si, POWER TRANSISTOR, TO-213AA	获取价格
2N6301	SEME-LAB	DARLINGTON SILICON POWER TRANSISTORS	获取价格
2N6301	NJSEMI	COMPLEMENTARY SILICON POWER TRANSISTORS	获取价格
2N6301	SAVANTIC	Silicon NPN Power Transistors	获取价格
2N6301	ISC	Silicon NPN Power Transistors	获取价格