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2N6301 PDF预览

2N6301

更新时间: 2024-02-26 17:15:24
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 131K
描述
Silicon NPN Power Transistors

2N6301 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-CBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.04外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:80 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-276ABJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N6301 数据手册

 浏览型号2N6301的Datasheet PDF文件第2页浏览型号2N6301的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6300 2N6301  
DESCRIPTION  
·With TO-66 package  
·DARLINGTON  
·Low collector saturation voltage  
·Complement to type 2N6298/6299  
APPLICATIONS  
·General purpose power amplifier and  
low frequency switching applications  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
60  
UNIT  
2N6300  
2N6301  
2N6300  
2N6301  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
8
Collector current-peak  
Base current  
16  
A
0.12  
75  
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance from junction to case  
2.33  
/W  

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