Datasheet > 2N6300_1

2N6300_1

更新时间： 2022-03-28 20:58:13

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	133K
描述
NPN DARLINGTON POWER

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数据手册

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2N6300_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

NPN DARLINGTON POWER

SILICON TRANSISTOR

Qualified per MIL-PRF-19500/539

DEVICES

LEVELS

2N6300

2N6301

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol 2N6300 2N6301

Unit

Vdc

V_CEO

V_CBO

V_EBO

I_B

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Vdc

5.0

120

8.0

Vdc

mAdc

Adc

Collector Current

I_C

Total Power Dissipation

@ T_C= +0°C ⁽¹⁾

@ T_C= +100°C

TO-66 (TO-213AA)

P_T

Operating & Storage Junction Temperature Range

T_j, T_stg

-55 to +200

°C

Note:

1. Derate linearly 0.428W/°C above T_C> 0°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Voltage

IC = 100mAdc

2N6300

2N6301

V_(BR)CEO

Vdc

Collector-Emitter Cutoff Current

_CE= 30Vdc

2N6300

2N6301

I_CEO

0.5

mAdc

V_CB= 40Vdc

Collector-Emitter Cutoff Current

V_CE= 60Vdc, V_BE= -1.5Vdc

2N6300

2N6301

I_CEX

0.5

mAdc

_CE= 80Vdc, V_BE= -1.5Vdc

Emitter-Base Cutoff Current

V_EB= 5.0Vdc

I_EBO

2.0

T4-LDS-0171 Rev. 1 (101129)

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