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2N6240/D PDF预览

2N6240/D

更新时间: 2024-11-23 23:19:51
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其他 - ETC 可控硅整流器
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4页 73K
描述
Silicon Controlled Rectifier

2N6240/D 数据手册

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by 2N6240/D  
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
. . . PNPN devices designed for high volume consumer applications such as  
temperature, light, and speed control; process and remote control, and warning  
systems where reliability of operation is important.  
SCRs  
4 AMPERES RMS  
400 VOLTS  
Passivated Surface for Reliability and Uniformity  
Power Rated at Economical Prices  
Practical Level Triggering and Holding Characteristics  
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
G
K
Recommended Electrical Replacement for C106  
A
A
CASE 77-08  
(TO-225AA)  
STYLE 2  
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
400  
Unit  
(1)  
*Repetitive Peak Forward and Reverse Blocking Voltage  
(1/2 Sine Wave)  
V
DRM  
or  
Volts  
(R  
= 1000 ohms, T = –40 to +110°C)  
V
RRM  
GK  
*Non–repetitive Peak Reverse Blocking Voltage  
(1/2 Sine Wave, R = 1000 ohms,  
C
V
RSM  
Volts  
Amps  
Amps  
GK  
= –40° to +110°C)  
T
C
450  
*Average On–State Current  
(T = –40 to + 90°C)  
I
T(AV)  
2.6  
1.6  
C
(T = +100°C)  
C
*Surge On–State Current  
I
TSM  
(1/2 Sine Wave, 60 Hz, T = +90°C)  
(1/2 Sine Wave, 1.5 ms, T = +90°C)  
25  
35  
C
C
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
2.6  
*Peak Gate Power  
(Pulse Width = 10 µs, T = 90°C)  
P
GM  
0.5  
Watts  
C
*Indicates JEDEC Registered Data.  
(continued)  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate  
RRM  
DRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
Motorola, Inc. 1999  

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