Datasheet > 2N60ZLL-TM3-T

2N60ZLL-TM3-T

更新时间： 2022-04-28 23:10:18

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	219K
描述
2A, 600V N-CHANNEL POWER MOSFET

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2N60ZLL-TM3-T 数据手册

2N60ZL

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_J=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

600

μA

V_DS= 600V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

Forward

Reverse

μA

Gate-Source Leakage Current

I_GSS

-5

μA

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JI_D=250μA, Referenced to 25°C

0.4

4.2

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS= 10V, I_D=1A

Ω

C_ISS

C_OSS

C_RSS

270 350 pF

V_DS=25V, V_GS=0V,

f =1MHz

Output Capacitance

40 50

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_{D (ON)}

t_R

t_D(OFF)

t_F

10 30

25 60

20 50

25 60

9.0 11

1.6

Turn-On Rise Time

V_DD=300V, I_D=2.4A, R_G=25Ω

(Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

V_DS=480V, V_GS=10V, I_D=2.4A

(Note 1, 2)

Gate-Source Charge

Q_GS

Q_GD

Gate-Drain Charge

4.3

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

Continuous Drain-Source Current

Pulsed Drain-Source Current

Reverse Recovery Time

V_SD

I_SD

V_GS= 0 V, I_SD= 2.0 A

1.4

2.0

I_SM

8.0

t_RR

180

μC

V_GS= 0 V, I_SD= 2.4A,

di/dt = 100 A/μs (Note1)

Reverse Recovery Charge

Q_RR

0.72

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-830.A

www.unisonic.com.tw

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