生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.03 A | 最小直流电流增益 (hFE): | 150 |
最高工作温度: | 200 °C | 极性/信道类型: | NPN |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 60 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6089 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N6090 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N6091 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N6092 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N6093 | ASI |
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NPN SILICON RF POWER TRANSISTOR | |
2N6097 | ETC |
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TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 6A I(C) | SOT-123VAR | |
2N6098 | JMNIC |
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Silicon NPN Power Transistors | |
2N6098 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N6098 | SAVANTIC |
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Silicon NPN Power Transistors | |
2N6098 | NJSEMI |
获取价格 |
SILICON N-P-N VERSAWATT TRANSISTORS |