Datasheet > 2N6099

2N6099

更新时间： 2024-01-03 17:02:12

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管局域网
页数	文件大小	规格书
5页	69K
描述
COMPLEMENTARY SILICON TRANSISTORS

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N6099 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.79
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N6099 数据手册

UTC2N3773/2N6099

POWER TRANSISTOR

COMPLEMENTARY SILICON

TRANSISTORS

The 2N3773/2N6099 are power-base power transistors

designed for high power audio, disk head positions and

other linear applications. These device can be used in

power switching circuits such as relay or solened drivers,

DC to DC converters or inverts.

FEATURES

*High safe operating area(100 tested)

150W and 100V

*Complement Characterized for linear operation

*High DC Current Gain and low saturation voltage

Hfe=15(8A 4V)

TO-3

Vce(sat)=1.4V(Ic=8A,Ib=0.8A)

*For Low Distortion Complementary Designs

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified )}

PARAMETERS

Collector-base voltage

SYMBOL

VCBO

VCEO

VEBO

VCEX

VALUE

160

140

UNITS

Collector-emitter voltage

Emitter-base voltage

Collector-emitter voltage

Total Power dissipation

Tc=25°C

Dertate above 25°C

Collector current

continuous

160

150

0.855

W/°C

Peak

Base current

continuous

Peak

Thermal resistance Junction to Case

Storage Temperature

RθJC

TSTG

1.17

-65 ~ +200

°C/W

°C

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R205-001,A

12 3 4 5

下载PDF

与2N6099相关器件

型号	品牌	描述	获取价格	数据表
2N6099_15	UTC	COMPLEMENTARY SILICON TRANSISTORS	获取价格
2N6099A	NJSEMI	Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 Box	获取价格
2N6099G-T30-Y	UTC	COMPLEMENTARY SILICON TRANSISTORS	获取价格
2N6099LEADFREE	CENTRAL	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast	获取价格
2N6099L-T30-Y	UTC	COMPLEMENTARY SILICON TRANSISTORS	获取价格
2N60-A-TA3-T	UTC	Transistor	获取价格