Datasheet > 2N60F

2N60F

更新时间： 2024-11-21 14:56:03

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
6页	1015K
描述
场效应晶体管

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2N60F 数据手册

2N60F

2 Amps, 600 Volts N-CHANNEL MOSFET

FEATURES



R_DS(on)=3.8Ω@V_GS=10V.

Ultra Low gate charge (typical 9.0nC)

Low reverse transfer capacitance (Crss = typical 5.0 pF)

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

600

Drain current continuous

(T_C=25℃) 2.0

I_D

(T_C=100℃) 1.26

Drain current Pulsed (Note2)

Gate -Source voltage

I_DP

8.0

±30

V_GSS

Avalanche Current (Note2)

Avalanche Energy

I_AR

2.0

Repetitive(Note 2)

Single Pulse(Note 3)

E_AR

E_AS

dv/dt

4.5

Avalanche Energy

140

Peak Diode Recovery dv/dt (Note4)

4.5

V/ns

Power Dissipation

(T_C=25℃)

P_D

T_J

Derate above 25℃

0.36

W/℃

Junction Temperature

Storage Temperature

+150

℃

T_STG

R_θJA

-55 ~ +150

℃

Thermal Resistance Junction-Ambient

℃/W

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently

damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not

implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=64mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤ 2.4A, di/dt ≤ 200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

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