是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 最大集电极电流 (IC): | 10 A |
配置: | Single | 最小直流电流增益 (hFE): | 20 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 75 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 0.8 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6099 | NJSEMI |
获取价格 |
SILICON NPN POWER TRANSISTORS | |
2N6099 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N6099 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N6099 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2N6099 | CENTRAL |
获取价格 |
NPN SILICON TRANSISTOR | |
2N6099 | UTC |
获取价格 |
COMPLEMENTARY SILICON TRANSISTORS | |
2N6099_15 | UTC |
获取价格 |
COMPLEMENTARY SILICON TRANSISTORS | |
2N6099A | NJSEMI |
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Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 Box | |
2N6099G-T30-Y | UTC |
获取价格 |
COMPLEMENTARY SILICON TRANSISTORS | |
2N6099LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |