Datasheet > 2N5796UTX

2N5796UTX

更新时间： 2024-01-28 21:37:40

品牌	Logo	应用领域
TTELEC		/
页数	文件大小	规格书
3页	454K
描述
Surface Mount Dual PNP Transistor

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技术参数
数据手册

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2N5796UTX 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.69	Base Number Matches：	1

2N5796UTX 数据手册

Surface Mount Dual PNP

Transistor

2N5796U (TX, TXV)

Electrical Speciﬁcations

Absolute Maximum Ratings (T_A= 25° C unless otherwise noted)

Collector‐Emiꢁer Voltage

60 V

Collector‐Base Voltage

Emiꢁer‐Base Voltage

5 V

Collector Current‐Conꢀnuous

600 mA

Operaꢀng Juncꢀon Temperature (T_J)

Storage Juncꢀon Temperature (T_stg)

Power Dissipaꢀon @ T_A= 25°C

‐65° C to +200 °C

‐65° C to +200° C

0.5 W

Power Dissipaꢀon @ Tc = 25° C

0.6 W⁽¹⁾

Soldering Temperature (vapor phase reﬂow for 30 seconds)

Soldering Temperature (heated collet for 5 seconds)

215° C

260° C

Electrical Characteristics (T_A= 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN MAX UNITS

TEST CONDITIONS

OFF CHARACTERISTICS

V_(BR)CBOCollector‐Base Breakdown Voltage

V_(BR)CEOCollector‐Emiꢁer Breakdown Voltage

V_(BR)EBOEmiꢁer‐Base Breakdown Voltage

I_C= 10 µA

µA

‐

I_C= 10 mA⁽¹⁾

I_E= 10 µA

V_CB= 50 V

I_CBO1

I_CBO2

I_EBO

Collector‐Base Cutoﬀ Current

Emiꢁer‐Base Cutoﬀ Current

V_BC= 50 V, T_A= 150°C

V_EB= 3 V

100

h_FE1

h_FE2

h_FE3

h_FE4

h_FE5

h_FE6

h_FE7

V_CE= 10 V, I_C= 100 µA

100

‐

V_CE= 10 V, I_C= 1.0 mA

V_CE= 10 V, I_C= 10 mA⁽¹⁾

V_CE= 10 V, I_C= 150 mA⁽¹⁾

V_CE= 10 V, I_C= 300 mA⁽¹⁾

V_CE= 1.0 V, I_C= 150 mA⁽¹⁾

V_CE= 10 V, I_C= 150 mA, T_A= ‐55° C⁽¹⁾

‐

Forward‐Current Transfer Raꢀo

100 300

‐

Note:

1. Pulsed Test: Pulse Width = 300 µs ± 50, 1‐2 % Duty Cycle

General Note

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Issue C 08/2016 Page 2

123

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