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2N5783LEADFREE PDF预览

2N5783LEADFREE

更新时间: 2024-09-30 19:50:23
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
2页 493K
描述
Small Signal Bipolar Transistor, 3.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N5783LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.21
最大集电极电流 (IC):3.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):4
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):8 MHz最大关闭时间(toff):2500 ns
最大开启时间(吨):500 nsBase Number Matches:1

2N5783LEADFREE 数据手册

 浏览型号2N5783LEADFREE的Datasheet PDF文件第2页 
2N5783 PNP  
2N5786 NPN  
www.centralsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5783 and  
2N5786 types are Complementary Silicon Power  
Transistors designed for general purpose switching and  
amplifier applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
V
V
V
A
A
W
W
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
V
V
V
V
45  
45  
40  
3.5  
3.5  
1.0  
10  
1.0  
CBO  
CER  
CEO  
EBO  
I
C
I
B
P
P
D
D
Power Dissipation (T =25°C)  
A
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
17.5  
175  
°C  
°C/W  
°C/W  
J
stg  
Θ
Θ
JC  
JA  
Thermal Resistance  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
I
I
V
V
V
V
V
V
=45V, V =1.5V  
10  
1.0  
10  
1.0  
100  
10  
μA  
CEV  
CEV  
CER  
CER  
CEO  
EBO  
CER  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
CE  
CE  
CE  
CE  
CE  
EB  
BE  
=45V, V =1.5V, T =150°C  
mA  
μA  
mA  
μA  
μA  
V
V
V
V
V
BE  
C
=40V, R =100Ω  
BE  
=40V, R =100Ω, T =150°C  
BE  
C
=25V  
=3.5V  
BV  
BV  
V
V
V
I =10mA, R =100Ω  
45  
40  
C
BE  
I =10mA  
C
I =1.6A, I =160mA  
1.0  
2.0  
1.5  
150  
C
B
B
I =3.2A, I =800mA  
C
V
=2.0V, I =1.6A  
CE  
CE  
CE  
CE  
CE  
CE  
CC  
CC  
CC  
CC  
C
h
h
V
V
V
V
V
V
V
V
V
=2.0V, I =1.6A  
20  
4.0  
8.0  
1.0  
25  
C
=2.0V, I =3.2A  
FE  
C
f
f
h
t
t
t
t
=2.0V, I =100mA, f=4.0MHz (2N5783)  
60  
4.0  
MHz  
MHz  
T
T
C
=2.0V, I =100mA, f=200kHz (2N5786)  
C
=2.0V, I =100mA, f=1.0kHz  
fe  
on  
on  
off  
off  
C
=30V, I =1.0A, I =I =100mA (2N5783)  
0.5  
5.0  
2.5  
15  
μs  
μs  
μs  
μs  
C
C
B1 B2  
B1 B2  
B1 B2  
=30V, I =1.0A, I =I =100mA (2N5786)  
=30V, I =1.0A, I =I =100mA (2N5783)  
C
=30V, I =1.0A, I =I =100mA (2N5786)  
B1 B2  
C
R1 (21-September 2011)  

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