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2N5783_11 PDF预览

2N5783_11

更新时间: 2024-09-30 07:28:59
品牌 Logo 应用领域
CENTRAL 晶体晶体管
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2页 493K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

2N5783_11 数据手册

 浏览型号2N5783_11的Datasheet PDF文件第2页 
2N5783 PNP  
2N5786 NPN  
www.centralsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5783 and  
2N5786 types are Complementary Silicon Power  
Transistors designed for general purpose switching and  
amplifier applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
V
V
V
A
A
W
W
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
V
V
V
V
45  
45  
40  
3.5  
3.5  
1.0  
10  
1.0  
CBO  
CER  
CEO  
EBO  
I
C
I
B
P
P
D
D
Power Dissipation (T =25°C)  
A
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
17.5  
175  
°C  
°C/W  
°C/W  
J
stg  
Θ
Θ
JC  
JA  
Thermal Resistance  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
I
I
V
V
V
V
V
V
=45V, V =1.5V  
10  
1.0  
10  
1.0  
100  
10  
μA  
CEV  
CEV  
CER  
CER  
CEO  
EBO  
CER  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
CE  
CE  
CE  
CE  
CE  
EB  
BE  
=45V, V =1.5V, T =150°C  
mA  
μA  
mA  
μA  
μA  
V
V
V
V
V
BE  
C
=40V, R =100Ω  
BE  
=40V, R =100Ω, T =150°C  
BE  
C
=25V  
=3.5V  
BV  
BV  
V
V
V
I =10mA, R =100Ω  
45  
40  
C
BE  
I =10mA  
C
I =1.6A, I =160mA  
1.0  
2.0  
1.5  
150  
C
B
B
I =3.2A, I =800mA  
C
V
=2.0V, I =1.6A  
CE  
CE  
CE  
CE  
CE  
CE  
CC  
CC  
CC  
CC  
C
h
h
V
V
V
V
V
V
V
V
V
=2.0V, I =1.6A  
20  
4.0  
8.0  
1.0  
25  
C
=2.0V, I =3.2A  
FE  
C
f
f
h
t
t
t
t
=2.0V, I =100mA, f=4.0MHz (2N5783)  
60  
4.0  
MHz  
MHz  
T
T
C
=2.0V, I =100mA, f=200kHz (2N5786)  
C
=2.0V, I =100mA, f=1.0kHz  
fe  
on  
on  
off  
off  
C
=30V, I =1.0A, I =I =100mA (2N5783)  
0.5  
5.0  
2.5  
15  
μs  
μs  
μs  
μs  
C
C
B1 B2  
B1 B2  
B1 B2  
=30V, I =1.0A, I =I =100mA (2N5786)  
=30V, I =1.0A, I =I =100mA (2N5783)  
C
=30V, I =1.0A, I =I =100mA (2N5786)  
B1 B2  
C
R1 (21-September 2011)  

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