Datasheet > 2N5771D74Z

2N5771D74Z

更新时间： 2023-02-26 13:45:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	708K
描述
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92

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2N5771D74Z 数据手册

2N5771

MMBT5771

TO-92

SOT-23

Mark: 3R

PNP Switching Transistor

This device is designed for very high speed saturated switching

at collector currents to 100 mA. Sourced from Process 65. See

PN4258 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

4.5

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5771

*MMBT5771

P_D

Total Device Dissipation

Derate above 25 C

350

2.8

225

1.8

mW/ C

Thermal Resistance, Junction to Case

125

R_θ

C/W

Thermal Resistance, Junction to Ambient

357

556

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...10

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