生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.75 |
风险等级: | 5.06 | 其他特性: | LOW NOISE |
配置: | SINGLE | 最小漏源击穿电压: | 25 V |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 1 pF |
最高频带: | ULTRA HIGH FREQUENCY BAND | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5484APM | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484APMLEADFREE | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484APP | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484APPLEADFREE | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484D26Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484D27Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484D75Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484-E3 | VISHAY |
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TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-226AA, TO-92, 3 PIN, FET RF | |
2N5484J05Z | TI |
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UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | |
2N5484-J14Z | TI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, 3 PIN |