2N5416

更新时间： 2024-01-04 20:43:42

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	61K
描述
PNP LOW POWER SILICON TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册
替代型号

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2N5416 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.74	Base Number Matches：	1

2N5416 数据手册

2N5415, 2N5416 JAN, SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS ⁽³⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 50 mAdc, V_CE= 10 Vdc

I_C= 1.0 mAdc, V_CE= 10 Vdc

Collector-Emitter Saturation Voltage

I_C= 50 mAdc, I_B= 5.0 mAdc

Base-Emitter Voltage

120

2.0

1.5

h_FE

Vdc

V_CE(sat)

V_BE

I_C= 50 mAdc, V_CE= 10 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short Circuit Forward

Current Transfer Ratio

I_C= 10 mAdc, V_CE= 10 Vdc, f = 5.0 MHz

Forward Current Transfer Ratio

I_C= 5.0 mAdc, V_CE= 10 Vdc, f = 1.0 kHz

Output Capacitance

V_CB= 10 Vdc, I_E= 0, 100 kHz £ f £ 1.0 MHz

Input Capacitance

3.0

½h_fe½

h_fe

C_obo

C_ibo

V_EB= 5.0 Vdc, I_C= 0, 100 kHz £ f £ 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Time

V_CC=200 Vdc, I_C= 50 mAdc, I_B1= 5.0 mAdc

Turn-Off Time

^ton

1.0

^toff

V_CC= 200 Vdc, I_C= 50 mAdc, I_B1= I_B2= 5.0 mAdc

SAFE OPERATING AREA

DC Tests

T_C= +25⁰C; 1 Cycle; t = 0.4 s

Test 1

V_CE= 10 Vdc, I_C= 1.0 Adc

Test 2

V_CE= 100 Vdc, I_C= 100 mAdc

Test 3

V_CE= 200 Vdc, I_C= 24 mAdc

Test 4

V_CE= 300 Vdc, I_C= 10 mAdc

2N5415

2N5416

(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

中文翻译

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2N5416 替代型号

型号	品牌	替代类型	描述	数据表
JAN2N5416S	MICROSEMI	完全替代	PNP LOW POWER SILICON TRANSISTOR
JAN2N5416	MICROSEMI	完全替代	PNP LOW POWER SILICON TRANSISTOR

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