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2N5374LEADFREE PDF预览

2N5374LEADFREE

更新时间: 2024-11-25 21:15:03
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
2页 328K
描述
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R, 3 PIN

2N5374LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:TO-92-18R, 3 PIN针数:3
Reach Compliance Code:not_compliant风险等级:5.4
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2N5374LEADFREE 数据手册

 浏览型号2N5374LEADFREE的Datasheet PDF文件第2页 
2N5374  
2N5375  
www.centralsemi.com  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N5374, 2N5375  
types are PNP silicon transistors, manufactured by the  
epitaxial planar process, designed for general purpose,  
medium current switching applications.  
MARKING: FULL PART NUMBER  
TO-92-18R CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
2N5374  
60  
2N5375  
40  
UNITS  
V
A
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
5.0  
500  
360  
V
V
Continuous Collector Current  
Power Dissipation  
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=Rated V  
50  
nA  
CBO  
CB  
CBO  
I
V
=3.0V  
50  
nA  
V
EBO  
EB  
BV  
BV  
BV  
BV  
I =10μA (2N5374)  
60  
40  
30  
5.0  
CBO  
CBO  
CEO  
EBO  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
I =10μA (2N5375)  
V
C
I =10mA  
V
C
I =10μA  
V
E
V
V
V
I =150mA, I =15mA  
300  
1.3  
1.2  
mV  
V
C
B
I =150mA, I =15mA  
C
B
V
=10V, I =150mA  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
CE  
CC  
CC  
C
h
h
h
h
h
h
V
V
V
V
V
V
V
V
V
V
=10V, I =1.0mA (2N5374)  
100  
20  
C
=10V, I =1.0mA (2N5375)  
FE  
C
=10V, I =10mA (2N5374)  
150  
30  
FE  
C
=10V, I =10mA (2N5375)  
FE  
C
=10V, I =150mA (2N5374)  
200  
40  
400  
400  
10  
FE  
C
=10V, I =150mA (2N5375)  
FE  
C
C
=10V, I =0, f=1.0MHz  
pF  
MHz  
ns  
ob  
E
f
t
t
=10V, I =20mA, f=100MHz  
150  
T
C
=30V, I =150mA, I =15mA  
50  
on  
off  
C
B
=6.0V, I =150mA, I =I =15mA  
175  
ns  
C
B1 B2  
R0 (9-October 2012)  

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