Datasheet > 2N4174

2N4174

更新时间： 2024-11-21 20:31:19

品牌	Logo	应用领域
DIGITRON		栅栅极
页数	文件大小	规格书
4页	794K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 5; Max DC Reverse Voltage: 2; Capacitance: 30; Package: TO-64

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中文翻译

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技术参数
数据手册

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2N4174 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.66	Is Samacsys：	N
触发设备类型：	SCR	Base Number Matches：	1

2N4174 数据手册

2N4167-2N4174

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage

2N4167

2N4168

2N4169

2N4170

2N4172

2N4174

100

200

400

600

V_DRM, V_RRM

Forward current RMS

I_T(RMS)

I_TSM

Peak forward surge current

(one cycle, 60Hz, T_J= -40 to +100°C)

100

Circuit fusing (t = 8.3ms)

Peak gate power

I²t

P_GM

P_G(AV)

I_GM

A²s

Average gate power

Peak gate current

0.5

Peak gate voltage

V_GM

T_J

Operating temperature range

Storage temperature range

Stud torque

-40 to +100

-40 to +150

°C

T_stg

°C

In. lb.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ.

Max

Unit

Thermal resistance, junction to case

R_ӨJC

1.5

2.5

°C/W

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open)

T_C= 25°C

I_DRM, I_RRM

µA

T_C= 100°C

Gate trigger current (continuous dc)

(V_D= 7V, R_L= 100Ω)

(V_D= 7V, R_L= 100Ω, T_C= -40°C)

I_GT

Gate trigger voltage (continuous dc)

(V_D= 7V, R_L= 100Ω)

(V_D= 7V, R_L= 100Ω, T_C= -40°C)

(V_D= 7V, R_L= 100Ω, T_C= 100°C)

0.75

1.5

2.5

V_GT

0.2

Forward “on” voltage (pulsed, 1ms max., duty cycle ≤ 1%)

(I_TM= 15.7A)

V_TM

1.4

Rev. 20130108

12 3 4

中文翻译

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