Datasheet > 2N3906/D

2N3906/D

更新时间： 2024-11-26 23:19:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	99K
描述
General Purpose Transistors

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中文翻译

获取价格

数据手册

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2N3906/D 数据手册

2N3906

Preferred Device

General Purpose

Transistors

PNP Silicon

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

BASE

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Vdc

EMITTER

5.0

Vdc

Collector Current – Continuous

200

mAdc

STYLE 1

Total Device Dissipation

@ T = 25°C

625

5.0

mW/°C

Derate above 25°C

TO–92

CASE 29

STYLE 1

Total Power Dissipation

250

@ T = 60°C

Total Device Dissipation

@ T = 25°C

1.5

Watts

mW/°C

Derate above 25°C

MARKING DIAGRAMS

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to

+150

°C

3906

YWW

THERMAL CHARACTERISTICS (Note 1.)

Characteristic Symbol

Thermal Resistance,

Max

Unit

200

°C/W

θJA

Junction to Ambient

= Year

= Work Week

Thermal Resistance,

Junction to Case

83.3

°C/W

θJC

1. Indicates Data in addition to JEDEC Requirements.

ORDERING INFORMATION

Device

2N3906

Package

TO–92

Shipping

5000 Units/Box

2N3906RLRA

2N3906RLRE

2N3906RLRM

2N3906RLRP

2N3906RL1

2000/Tape & Reel

2000/Ammo Pack

2000/Tape & Reel

2000/Ammo Pack

2N3906ZL1

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 0

2N3906/D

12 3 4 5 6 7 8

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