Datasheet > 2N3771_06

2N3771_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
5页	86K
描述
High Power NPN Silicon Power Transistors

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2N3771_06 数据手册

2N3771, 2N3772

+ꢀ30 V

V = 30

I /I = 10

5.0

2.0

1.0

0.5

C B

= 5.0 V

BE(off)

25 ms

T = 25°C

+11 V

SCOPE

0.2

0.1

−

9.0 V

−ꢀ4 V

t , t ≤ 10 ns

0.05

DUTY CYCLE = 1.0%

R AND R ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.02

0.01

D1 MUST BE FAST RECOVERY TYPE, e.g.:

ꢁ1N5825 USED ABOVE I ≈ 100 mA

0.3 0.5 0.7 1.0

2.0

3.0 5.0 7.0 10

20 30

ꢁMSD6100 USED BELOW I ≈ 100 mA

I , COLLECTOR CURRENT (AMP)

Figure 4. Switching Time Test Circuit

Figure 5. Turn−On Time

100

2000

T = 25°C

I /I = 10

= 30 V

C B

= I

B1 B2

T = 25°C

1000

700

5.0

2.0

1.0

0.5

500

300

200

0.2

0.1

0.3

0.5

1.0

2.0 3.0

5.0 7.0 10

20 30

0.1 0.2

0.5

1.0 2.0

5.0

10 20

50 100

I , COLLECTOR CURRENT (AMP)

V , REVERSE VOLTAGE (VOLTS)

Figure 6. Turn−Off Time

Figure 7. Capacitance

500

2.0

T = 25°C

300

200

T = 150°C

= 4.0 V

1.6

1.2

0.8

0.4

25°C

I = 2.0 A 5.0 A

10 A

20 A

100

−ꢀ55°C

7.0

5.0

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30

0.01 0.02

0.05 0.1 0.2

0.5

1.0 2.0

5.0

I , COLLECTOR CURRENT (AMP)

Figure 9. Collector Saturation Region

Figure 8. DC Current Gain

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