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2N3771_00 PDF预览

2N3771_00

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管高功率电源
页数 文件大小 规格书
5页 86K
描述
HIGH POWER NPN SILICON TRANSISTOR

2N3771_00 数据手册

 浏览型号2N3771_00的Datasheet PDF文件第1页浏览型号2N3771_00的Datasheet PDF文件第3页浏览型号2N3771_00的Datasheet PDF文件第4页浏览型号2N3771_00的Datasheet PDF文件第5页 
2N3771, 2N3772  
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Sustaining Voltage (Note 2 and 3)  
(I = 0.2 Adc, I = 0)  
2N3771  
2N3772  
V
40  
60  
Vdc  
Vdc  
CEO(sus)  
C
B
Collector−Emitter Sustaining Voltage  
(I = 0.2 Adc, V = 1.5 Vdc, R = 100 W)  
2N3771  
2N3772  
V
50  
80  
CEX(sus)  
CER(sus)  
C
EB(off)  
BE  
Collector−Emitter Sustaining Voltage  
(I = 0.2 Adc, R = 100 W)  
2N3771  
2N3772  
V
45  
70  
Vdc  
C
BE  
Collector Cutoff Current (Note 2)  
(V = 30 Vdc, I = 0)  
I
mAdc  
CEO  
2N3771  
2N3772  
CE  
B
10  
10  
(V = 50 Vdc, I = 0)  
CE  
B
(V = 25 Vdc, I = 0)  
CE  
B
Collector Cutoff Current (Note 2)  
(V = 50 Vdc, V = 1.5 Vdc)  
I
mAdc  
CEV  
2N3771  
2N3772  
2N6257  
2N3771  
2N3772  
CE  
EB(off)  
2.0  
5.0  
4.0  
10  
(V = 100 Vdc, V  
= 1.5 Vdc)  
= 1.5 Vdc)  
= 1.5 Vdc, T = 150_C)  
CE  
EB(off)  
(V = 45 Vdc, V  
CE  
EB(off)  
EB(off)  
(V = 30 Vdc, V  
CE  
C
10  
(V = 45 Vdc, V  
= 1.5 Vdc, T = 150_C)  
CE  
EB(off)  
C
Collector Cutoff Current (Note 2)  
(V = 50 Vdc, I = 0)  
I
I
mAdc  
mAdc  
CBO  
2N3771  
2N3772  
CB  
E
2.0  
5.0  
(V = 100 Vdc, I = 0)  
CB  
E
Emitter Cutoff Current (Note 2)  
(V = 5.0 Vdc, I = 0)  
EBO  
2N3771  
2N3772  
BE  
C
5.0  
5.0  
(V = 7.0 Vdc, I = 0)  
BE  
C
ON CHARACTERISTICS (Note 2)  
DC Current Gain (Note 3)  
h
FE  
(I = 15 Adc, V = 4.0 Vdc)  
2N3771  
2N3772  
C
CE  
15  
15  
60  
60  
(I = 10 Adc, V = 4.0 Vdc)  
C
CE  
(I = 8.0 Adc, V = 4.0 Vdc)  
C
CE  
(I = 30 Adc, V = 4.0 Vdc)  
2N3771  
2N3772  
C
CE  
5.0  
5.0  
(I = 20 Adc, V = 4.0 Vdc)  
C
CE  
Collector−Emitter Saturation Voltage  
(I = 15 Adc, I = 1.5 Adc)  
V
Vdc  
Vdc  
CE(sat)  
2N3771  
2N3772  
2N3771  
2N3772  
C
B
2.0  
1.4  
4.0  
4.0  
(I = 10 Adc, I = 1.0 Adc)  
C
B
(I = 30 Adc, I = 6.0 Adc)  
C
B
(I = 20 Adc, I = 4.0 Adc)  
C
B
Base−Emitter On Voltage  
(I = 15 Adc, V = 4.0 Vdc)  
V
BE(on)  
2N3771  
2N3772  
C
CE  
2.7  
2.2  
(I = 10 Adc, V = 4.0 Vdc)  
C
CE  
(I = 8.0 Adc, V = 4.0 Vdc)  
C
CE  
*DYNAMIC CHARACTERISTICS (Note 2)  
Current−Gain — Bandwidth Product  
f
0.2  
40  
MHz  
T
(I = 1.0 Adc, V = 4.0 Vdc, f = 50 kHz)  
C
CE  
test  
Small−Signal Current Gain  
(I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz)  
h
fe  
C
CE  
SECOND BREAKDOWN  
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive)  
I
Adc  
S/b  
(V = 40 Vdc)  
(V = 60 Vdc)  
CE  
2N3771  
2N3772  
CE  
3.75  
2.5  
2. Indicates JEDEC registered data.  
3. Pulse Test: 300 ms, Rep. Rate 60 cps.  
http://onsemi.com  
2
 

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